Leading Memory Innovation with HBM3E

Samsung Keeping Pace with Generative AI
The pulse of generative AI is racing at a pace that will require the top players in the memory market to produce unparalleled bandwidth, needed to keep up with the number-crunching intensity required by AI/ML and other high-performance computing workloads. Samsung is leading the pack with its latest 5th generation high bandwidth memory (HBM) device: HBM3E 12H DRAM. This device is designed to give a significant edge to high-demand systems, data centers, AI applications, and advanced graphics-unit processors that power AI computing.

HBM3E Power and Performance
Starting from the ground up, this impressive new DRAM device is based on an advanced 1anm node process and is built on high-k metal gate (HKMG) technology that replaces the former insulation layers with material that reduces electrical current leakage. This, along with strategic internal circuit optimization, increases performance and improves the device power efficiency by 12% compared to the previous generation. Adding to the performance matrix of this DRAM is its capability to produce data rates of 9.8Gbps per pin, giving it a super-fast 1,250GB/s of performance speed.

Stacking the Chips and Packaging
The strategic stacking of 12 layers of 24Gb DRAM chips using Through-Silicon Via (TSV) technology gives the HBM3E astounding bandwidth and an industry-leading 36GB of capacity per layer. This scheme improves capacity by 50% over its 12-layer HBM3 predecessor. The HBM3E and HBM3 chip sizes are compatible with each other, allowing easy transfer of hardware layouts from HBM3 to HBM3E.

Improved Thermal Performance
A key aspect of HBM3E engineering is the reduction of the joint gap between stacks, a critical development aimed at minimizing thermal resistance. This reduction is achieved without compromising integrity, through advanced Thermal Compression Non-Conductive Film (TC NCF). This material fills in the joint gaps effectively, ensuring there are no voids that could impair thermal performance.

To optimize the HBM3E for high-performance applications where heat dissipation is critical, an Epoxy Molding Compound (EMC) with exceptional thermal conductivity works as the outermost packaging material. This choice in material not only enhances the thermal management capabilities of the HBM3E, but also contributes to its overall reliability and efficacy in meeting the demands of harsh environments.

HBM3E in the Memory Market
All these engineering elements result in a memory solution that offers outstanding density, performance, and thermal efficiency. What does this impressive technological innovation mean for the memory market? Simply this: Samsung will remain the leader in providing the highest performing HBM devices to the market.