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2.5D Package: I-Cube™ & H-Cube™

I-Cube™ deploys parallel horizontal chip placement to boost performance while combating heat build-up. Samsung’s Through Silicon Via ( TSV ) and Backend-of-the-line ( BEOL ) technologies form a foundation for two or more chips to harmonize their specialized functions, becoming more than the sum of their parts to deliver powerful solutions for modern devices. I-Cube™ is available in I-CubeS™ and I-CubeE™ derivatives based on the interposer type.

I-Cube™

H-Cube™

3D IC: X-Cube™

3D IC packages boost performance even further by using much shorter interconnect wire lengths by stacking components vertically, enabling ultra-high vertical interconnect density with lower parasitics while saving massive amounts of on-chip real estate. 3D IC: X-Cube™ technology dramatically reduces yield risks from large monolithic dies, with 3D Integration that enables high system performance with lower cost while retaining high bandwidth and low power.

3D IC: X-Cube™

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